IBM and Samsung claim they’ve made a breakthrough in semiconductor design. On day one of the IEDM conference in San Francisco, the two companies unveiled a new design for stacking transistors vertically on a chip. With current processors and SoCs, transistors lie flat on the surface of the silicon, and then electric current flows from side-to-side. By contrast, Vertical Transport Field Effect Transistors (VTFET) sit perpendicular to one another and current flows vertically.
the design leads to less wasted energy thanks to greater current flow. They estimate VTFET will lead to processors that are either twice as fast or use 85 percent less power than chips designed with FinFET transistors.
Source: New IBM and Samsung transistors could be key to super-efficient chips (updated) | Engadget